SemiQ Expands Power Electronics Portfolio with High-Efficiency Gen4 QSiC MOSFETs

SemiQ has officially announced the launch of its next-generation 750-V and 1200-V Gen4 QSiC MOSFETs, marking a significant step forward in power semiconductor technology. According to the company, these newly developed power devices deliver a notable 21% reduction in on-resistance alongside an 11% decrease in switching energy when compared directly to their predecessors in the Gen3 lineup. This performance leap addresses the growing demand for higher efficiency, enhanced thermal performance, and greater power density across a broad spectrum of demanding industrial and automotive applications.

At the forefront of this new release are two flagship part numbers: the 750-V GP4T009A075 and the 1200-V GP4T011A120. These advanced silicon carbide power devices feature ultra-low on-resistances of 9 mΩ and 11 mΩ, respectively. To accommodate various manufacturing and system integration requirements, SemiQ is offering these high-performance power devices in robust TO-247-4L packages as well as in bare die formats, providing engineers and system designers with flexible options for their specific thermal and mechanical assembly constraints. The combination of high voltage ratings, low resistance, and versatile packaging makes these components exceptionally well suited for integration into modern electric vehicle chargers, advanced solar inverters, industrial motor drives, and high-voltage DC/DC and DC/AC power conversion systems.

The foundation of this performance enhancement lies in SemiQ’s newly refined Gen4 technology platform. This latest iteration utilizes a highly optimized cell topology that achieves a remarkable 36% reduction in cell pitch compared to previous generations. By shrinking the cell pitch, SemiQ engineers have been able to pack more active components into the same physical footprint, thereby improving current handling capabilities and reducing parasitic losses.

Specifically, the 1200-V SiC MOSFET delivers enhanced conduction and switching performance while retaining the exact same compact 5-by-5-millimeter die size found in the older Gen3 1200-V devices. Despite maintaining this identical physical footprint, the Gen4 1200-V variant successfully reduces total switching energy down to 1,491 microjoules. Meanwhile, the 750-V SiC MOSFET—a voltage class that was entirely unavailable in SemiQ’s previous generation portfolio—enters the market with a remarkably low total switching energy of just 871 microjoules. This introduction of a 750-V option fills a crucial gap for system designers working on intermediate bus voltages and specific automotive powertrain architectures where 650-V devices fall slightly short and 1200-V devices introduce unnecessary margin and cost.

Reliability and ruggedness remain central to SemiQ’s design philosophy, particularly given the harsh operational environments in which silicon carbide devices are typically deployed. To ensure long-term field reliability and stable electrical characteristics under stress, both the 750-V and 1200-V Gen4 MOSFET dies undergo rigorous wafer-level gate-oxide burn-in screening. During this intensive screening process, the 750-V dies are subjected to voltages exceeding 800 V, while the 1200-V dies face voltages surpassing 1400 V. In addition to oxide screening, both voltage variants have been thoroughly avalanche-tested up to 800 millijoules, demonstrating their ability to withstand sudden voltage transients and inductive kickback events without sustaining structural damage.

To support immediate adoption and design-in activities across the power electronics industry, SemiQ has confirmed that all four part numbers associated with this Gen4 release are available immediately. For clarity in procurement and engineering design, the company has established a straightforward suffix system: the letter H is used to denote devices housed in the TO-247-4L package, while the letter X designates the bare die configuration. Complete product specifications, technical documentation, and direct ordering pathways are accessible through SemiQ’s official product pages for the GP4T009A075H, GP4T009A075X, GP4T011A120H, and GP4T011A120X.